RABS15M REG Tech Spezifikatioune
Taiwan Semiconductor Corporation - RABS15M REG technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Taiwan Semiconductor Corporation - RABS15M REG
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Taiwan Semiconductor | |
| Voltage - Peak Reverse (Max) | 1 kV | |
| Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 1.5 A | |
| Technologie | Standard | |
| Supplier Device Package | ABS-L | |
| Serie | - | |
| Package / Case | 4-SMD, Gull Wing |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tape & Reel (TR) | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Diode Type | Single Phase | |
| Aktuell - Reverse Leakage @ Vr | 1 µA @ 1000 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 1.5 A | |
| Basis Produktnummer | RABS15 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Taiwan Semiconductor Corporation RABS15M REG.
| Produktiounsattriff |  |
 |
 |
 |
|---|---|---|---|---|
| Part Number | RABS15M REG | GBPC2506W | GBPC3508 | MB6S-E3/80 |
| Hiersteller | Taiwan Semiconductor Corporation | Diodes Incorporated | Fairchild Semiconductor | Vishay General Semiconductor - Diodes Division |
| Serie | - | - | - | - |
| Technologie | Standard | Standard | Standard | Standard |
| Mounting Type | Surface Mount | Through Hole | QC Terminal | Surface Mount |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Package protegéieren | Tape & Reel (TR) | Tray | Bulk | Tape & Reel (TR) |
| Voltage - Viru (Vf) (Max) @ Wann | 1 V @ 1.5 A | 1.1 V @ 12.5 A | 1.1 V @ 17.5 A | 1 V @ 400 mA |
| Voltage - Peak Reverse (Max) | 1 kV | 600 V | 800 V | 600 V |
| Diode Type | Single Phase | Single Phase | Single Phase | Single Phase |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 1.5 A | 25 A | 35 A | 500 mA |
| Package / Case | 4-SMD, Gull Wing | 4-Square, GBPC-W | 4-Square, GBPC | TO-269AA, 4-BESOP |
| Basis Produktnummer | RABS15 | GBPC2506 | - | MB6 |
| Aktuell - Reverse Leakage @ Vr | 1 µA @ 1000 V | 5 µA @ 600 V | 5 µA @ 800 V | 5 µA @ 600 V |
| Supplier Device Package | ABS-L | GBPC-W | GBPC | TO-269AA (MBS) |
Eroflueden RABS15M REG PDF DataDhusts an Taiwan Semiconductor Corporation Dokumentatioun fir RABS15M REG - Taiwan Semiconductor Corporation.
GBPC2506WDiodes IncorporatedBRIDGE RECT 1PH 600V 25A GBPC-WGBPC3508Fairchild SemiconductorBRIDGE RECTIFIER DIODE, 1 PHASE,
RABN-22QZSiemensIGBT ModuleRABN-22G2LNIECIGBT ModuleMB6S-E3/80Vishay General Semiconductor - Diodes DivisionBRIDGE RECT 1P 600V TO269AA
GBJ1506SMC Diode SolutionsBRIDGE RECT 1PHASE 600V 15A GBJRAB908LRFSEMIRAB916HRFSEMI
UC2610NTexas InstrumentsBRIDGE RECT 1PHASE 50V 1A 8DIPRABN-220ZLENOIGBT ModuleRABBIT3000RABBIT
RABF210-13Diodes IncorporatedBRIDGE RECT 1PHASE 1KV 2A 4SOPA
DF10S/27Vishay General Semiconductor - Diodes DivisionBRIDGE RECT 1PHASE 1KV 1A DFSRAB08220GFANY
BU1008-E3/45Vishay General Semiconductor - Diodes DivisionBRIDGE RECT 1P 800V 3.2A BURAB908HRFSEMIRABN-IIQZNOIGBT ModuleRABBIT2000RABBIT| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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